By W. Th. H. Hetterscheid (auth.)

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25n:fl' 2 " 1'--.. _ ~~ " ~ r2 1( versus 6 8 10 --VcE(V} Fig. 31. Output capacitance Coe versus collector-emitter voltage. /1 9oe- ~201JU tIE (mA) / / / I / / / 2 / / / v v v v v j l/' v v // r/ / "/ ~ ~v I-"' ~ .... iU. / / 6 - ........ r- ~ ~ ..... 1 g.. Fig. 30. Output damping collector-emitter voltage. , / ....... - -- ......... - ~ ~ - 1&1~ :::::;; 1301JU 801JV 1--I--' 1-- 50JJU I 201JTJ 6 10 8 - -Vet;M Fig. 32. , in the IE- VeE plane. 38 [4 TRANSISTOR PARAMETERS Fig. 37 Representation of goe in the le-VeE plane.

Transfer admittance ratio Nand intrinsic regeneration coefficient t versus frequency. , ~f ~ 33 --..... I Vcp-IOV t~uM .... 1... ~ >' Vcp-SV ---- r-~ -...... f=35Mcls 2~0 '~ "~ ""' J2 I 9 ............ ....... _ (") ~... ' '~ r-... '', ,- " 1\ -;ft \ '··:"\ ><~. VcE=-TOV ~. Vcp-SV ~ 30 5 2 Fig. 40. _IE (mA) e versus emitter current. 180 160 44 TRANSISTOR PARAMETERS [4 e as functions of emitter Fig. 43 Quantities current. i. '" Fig. 45 .. Fig. 45 - VeE= c,f = 35 Mcfs, = 25 °C. T1 I Quantities N and t as functions of emitter current.

4 TRANSISTOR PARAMETERS [4 DEPENDENCE OF OUTPUT ADMITTANCE ON VOLTAGE AND CURRENT Fig. , ~ Output damping goe as a function of emitter current. goe = f(IE), VeE= c,J = 35 Mcjs, T1 = 25° C. I • Fig. 35 .... Output capacitance Coe as a function of emitter current. Coe = f(IE), VeE = c, f = 35 Mc/s, T1 = 25 °C . -. Fig. 37 Output damping g 0 e as a function of collectoremitter voltage. goe = f(VeE), IE= c, f = 35 Mcjs, T1 = 25 °C. '- Fig. 37 Output capacitance Coe as a function of collectoremitter voltage.

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