By W. Neumann, M. Pasemann, J. Heydenreich (auth.), Prof. Dr. H. C. Freyhardt (eds.)

In strong nation physics and in fabrics technological know-how the research of the relationship among the homes of solids and their microstructure is of significant value. For crystalline fabrics this connection is said to the lattice constitution, and it may be proven convinc­ ingly that the cloth homes depend upon deviations from the best lattice constitution within the majority of circumstances. accordingly a competent detection and research of defects in "nearly ideal" crystals is critical, and a enough spatial solution of the equipment utilized is needed. simply because electrons at the one hand strongly have interaction with the problem to be investigated and nevertheless can simply be centred electron-optical equipment are very useful for this objective. they're utilized in the diffraction mode, within the imaging mode and within the spectroscopic mode. The possible excessive lateral solution within the imaging mode makes the appliance of electron microscopy specifically powerful. even though already precious info on crystal defects might be won through the use of the regimen means of diffraction distinction imagingl-3) which has a answer of a few four 10 nm - within the particular weak-beam process ) of a few nm -, the detection of crystal defects and inhomogeneities, resp. on an atomic or molecular point by means of assistance from excessive­ answer electron microscopy will get expanding importance.

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A30, 280 (1974) High-Resolution Electron Microscopy of Crystals 81. Bursill, L. , Wood, G. : Philos. Mag. A 38, 673 (1978) 82. Bursill, L. : Resolution Enhancement at 100 kV: Its Limitations and Some Applications, in: Direct Imaging of Atoms in Crystals and Molecules (Proc. 47th Nobel Symp. , p. 83, Stockholm, The Royal Swedish Academy of Sciences and the Nobel Foundation 1979 83. Anstis, G. , Cockayne, D. J. : Acta Cryst. A35, 511 (1979) 84. U. Multi-Slice Programs, Tempe, Arizona State University 1980 85.

W. Neumann et al. Fig. 12. High-resolution image (9-beam case) of a faulted loop in CdTe lying in the (110) foil plane structure of a stacking fault in silicon could successfully be described by Krivanek1l2). 63 nm. As the semiconductor compound GaAs has a diamond-like sphalerite unit cell the nature of the stacking faults should be similar to that of silicon. Figure 13 a shows a nine-beam image of an end- Fig. 13 a, b. High-resolution images (9-beam case) of end-on stacking faults in (110) oriented GaAs doped with tellurium.

Philos. Mag. 20, 1265 (1969) Crewe, A. , Welter, L. : J. Appl. Phys. 39, 5861 (1968) Crewe, A. : J. Mol. BioI. 48, 375 (1970) Crewe, A. : J. Electron Microsc. 28, S-9 (1979) Menter, J. : Proc. Roy. Soc. London A 236, 119 (1956) Allpress, J. , Sanders, J. , Wadsley, D. : Acta Cryst. B25, 1156 (1969) Cowley, J. : Proc. 9th Int. Congr. Electr. , Toronto 1978, Vol. III, p. : J. Electron Microsc. 28, S-l (1979) Hirsch, P. : ibid. : Proc. 7th Europ. Reg. Congr. Electr. , The Hague 1980, Vol. I, p. : Proc.

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